Object

Title: Influence of materials grain structure on the performance of optoelectronic devices

Creator:

Szyszka, Adam ; Paszkiewicz, Bogdan ; Wośko, Mateusz ; Tłaczała, Marek

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 549-554

Abstrakt:

The influence of grain structure of materials on optoelectronic devices performance was examined by light beam induced current (LBIC) technique. AlGaN metal–semiconductor–metal (MSM) detectors and polycrystalline silicon solar cells were examined. In case of AlGaN MSM structures, the effective region of carrier collection of contact electrodes was estimated as hundreds of nanometers. For these structures, the regions, where measured signals were two orders of magnitude larger than the average signal, were also observed. Measurements of polycrystalline solar cells allow us to determine the recombination activity of grain boundaries. LBIC method was applied to investigate layers quality used for MSM detectors and solar cells fabrication.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Resource Identifier:

oai:dbc.wroc.pl:72848

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

Group publication title:

Optica Applicata

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