Title:

Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region

Group publication title:

Optica Applicata

Creator:

Pucicki, Damian ; Zborowska-Lindert, Iwona ; Ściana, Beata ; Radziewicz, Damian ; Boratyński, Bogusław

Contributor:

Gaj, Miron. Redakcja

Subject and Keywords:

optyka ; p-i-n photodetector ; diluted nitrides ; (In,Ga)(As,N) ; GaAs-based photodetectors ; double quantum well (DQW) heterostructures

Description:

Optica Applicata, Vol. 37, 2007, nr 4, s. 415-421

Abstrakt:

Double quantum well (DQW) (In, Ga)(As, N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As, N) (structure #DP02) or 4 nm (In, Ga)(As, N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 μA.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2007

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska