Title:

Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers

Group publication title:

Optica Applicata

Creator:

Adamowicz, Bogusława ; Miczek, Marcin ; Hashizume, Tamotsu ; Klimasek, Andrzej ; Bobek, Piotr ; Żywicki, Janusz

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Subject and Keywords:

optyka ; gallium nitride ; HEMT ; insulated gate ; passivation ; C-V ; Auger spectroscopy ; chemical in-depth profiles

Description:

Optica Applicata, Vol. 37, 2007, nr 4, s. 327-334

Abstrakt:

AlGaN/GaN heterostructures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers were characterized electrically by capacitance-voltage measurements and chemically by Auger microscopy chemical in-depth profiling. The 2-dimensional electron gas density was estimated from C-V curves and the electronic quality of the bilayers was evaluated from C-V hysteresis. Detailed variations of Auger peaks, in particular for oxygen, silicon, nitrogen, and carbon, versus argon ion sputtering time were registered. The electronic properties of these two structures were compared with each other and to their chemistry.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2007

Resource Type:

artykuł

Format:

application/pdf

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska