Title:

Resonant microcavity enhanced infrared photodetectors

Group publication title:

Optica Applicata

Creator:

Kaniewski, Janusz ; Muszalski, Jan ; Piotrowski, Józef

Contributor:

Gaj, Miron. Redakcja

Subject and Keywords:

optyka ; optoelectronic device characterization, design and modeling ; III–V and II–VI semiconductors

Description:

Optica Applicata, Vol. 37, 2007, nr 4, s. 405-413

Abstrakt:

Resonant cavity enhanced (RCE) infrared photodetectors are used in many applications due to their high quantum efficiency and large bandwidth. Therefore, wide device diversity is desired. In this paper, recent tendencies in design and fabrication of these devices are presented. Various issues for InGaAs/InAlAs/InP RCE detectors operating at 1.55 μm and HgCdTe/CdTe/GaAs RCE devices dedicated for 10.6 μm radiation detection are discussed. The detector structures were grown by means of two industry standard technologies, i.e., molecular beam epitaxy and metaloorganic chemical vapor deposition. Optimized devices can be optically integrated with monolithic microlenses.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2007

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 37, 2007 ; Optica Applicata, Vol. 37, 2007, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska