Title:

Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition

Group publication title:

Optica Applicata

Creator:

Przesławski, Tomasz ; Wolkenberg, Andrzej ; Kaniewski, Janusz ; Regiński, Kazimierz ; Jasik, Agata

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; Hall sensors ; magnetoresistors ; InGaAs/InP heterostructures ; electronic transport ; geometric correction factor ; molecular beam epitaxy (MBE) ; metalorganic chemical vapor deposition (MOCVD)

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 627-634

Abstrakt:

In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric correction factor GH on sensitivity parameters of these devices has been investigated. The results have been used in order to optimize the structure design behavior at temperatures ranging from 3 to 300 K. The large changes of the galvanomagnetic parameters vs. magnetic field and temperature allow these devices to be used as signal and measurement magnetic field sensors.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska