Title:

Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer

Group publication title:

Optica Applicata

Creator:

Motyka, Marcin ; Sęk, Grzegorz ; Andrzejewski, Janusz ; Kudrawiec, Robert ; Misiewicz, Jan ; Ściana, Beata ; Radziewicz, Damian ; Tłaczała, Marek

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; quantum well ; contactless electroreflectance ; built-in electric field ; delta-doping

Description:

Optica Applicata, Vol. 35, 2005, nr 3, s. 471-477

Abstrakt:

In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER spectra. Obtained results have been compared with theoretical calculations preformed in the framework of the effective mass approximation. In order to accurately find the wavefunctions of electrons and holes confined in the quantum well embedded in the built-in electric field, the time-dependent Schrödinger equation has been solved.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2005

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 35, 2005 ; Optica Applicata, Vol. 35, 2005, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska