Object structure
Title:

Ti-doped In2O3 transparent conductive thin films with high transmittance and low resistivity

Group publication title:

Optica Applicata

Creator:

Song, Zhenyu ; Fu, Qiang ; Li, Lei ; Li, Li ; An, Yupeng ; Wang, Yiding

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Subject and Keywords:

optyka ; sputtering ; In2O3 ; transparent conductive oxide ; thin films

Description:

Optica Applicata, Vol. 40, 2010, nr 4, s. 751-757

Abstrakt:

Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF) sputtering with different sputtering powers (90, 120, 150, and 180 W) at 330 °C. The influence of sputtering power on the structural, electrical and optical properties of the deposited thin films is investigated. The average transmittance of the thin films in the wavelength range of 500–1100 nm is over 90%. Low resistivity of 7.3×10–4 Ωcm is also obtained based on our thin films, suggesting that Ti-doped In2O3 is a good candidate for transparent conductive thin film.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2010

Resource Type:

artykuł

Format:

application/pdf

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 40, 2010 ; Optica Applicata, Vol. 40, 2010, nr 4 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska

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