Title:

GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser

Group publication title:

Optica Applicata

Creator:

Wang, Yonggang ; Ma, Xiaoyu ; Wang, CuiLuan ; Lin, Tao ; Zhen, Kai ; Wang, Jun ; Zhong, Li ; Jia, YuLei ; Wei, ZhiYi

Contributor:

Gaj, Miron. Redakcja ; Wilk, Ireneusz. Redakcja

Subject and Keywords:

optyka ; GaAs ; low temperature ; Q-switch ; Nd:YVO4 laser

Description:

Optica Applicata, Vol. 36, 2006, nr 1, s. 23-28

Abstrakt:

We report, for the first time to the best of our knowledge, on a passively Q-switched Nd:YVO4 laser with a GaAs absorber grown at low temperature (LT) by metal organic vapor phase expitaxy. Using the LT GaAs absorber as well as an output coupler, a passively Q-switched laser whose pulse duration is as short as 90 ns was obtained.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2006

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 36, 2006 ; Optica Applicata, Vol. 36, 2006, nr 1 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska