Title:

Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs

Group publication title:

Optica Applicata

Creator:

Motyka, Marcin ; Gelczuk, Łukasz ; Dąbrowska-Szata, Maria ; Serafińczuk, Jarosław ; Kudrawiec, Robert ; Misiewicz, Jan

Contributor:

Gaj, Miron. Redakcja ; Urbańczyk, Wacław. Redakcja

Subject and Keywords:

optyka ; III-V semiconductors ; PR spectroscopy ; X-ray diffraction ; strain relaxation ; gallium indium arsenide

Description:

Optica Applicata, Vol. 39, 2009, nr 3, s. 561-570

Abstrakt:

Room temperature photoreflectance (PR) spectroscopy and high resolution X-ray diffraction (HRXRD) have been used to investigate InxGa1–xAs layers grown compressively by MOVPE on GaAs substrates, with different composition and thickness. HRXRD reveals that all the samples are partially relaxed and In composition has been determined for each of the samples. The effects of residual strain on the optical response of the samples, namely interband transitions and the valence band splitting, were analyzed by fitting the standard line shape form to the PR data. The energies determined experimentally as a function of indium content were compared to those obtained in the framework of the elastic strain theory for pseudomorphic layers. This comparison allows us to estimate the extent of strain relaxation and to determine the residual strain values in the samples. Furthermore, we revealed that the measured residual strain εres follows t–1/2 dependence on the epitaxial layers thickness t. This confirms the appropriateness of the nonequilibrium models (energy-balance models) for these structures.

Publisher:

Oficyna Wydawnicza Politechniki Wrocławskiej

Place of publication:

Wrocław

Date:

2009

Resource Type:

artykuł

Source:

<sygn. PWr A3481II> ; click here to follow the link ; click here to follow the link

Language:

eng

Relation:

Optica Applicata ; Optica Applicata, Vol. 39, 2009 ; Optica Applicata, Vol. 39, 2009, nr 3 ; Politechnika Wrocławska. Wydział Podstawowych Problemów Techniki

Rights:

Wszystkie prawa zastrzeżone (Copyright)

Access Rights:

Dla wszystkich w zakresie dozwolonego użytku

Location:

Politechnika Wrocławska